? semiconductor components industries, llc, 2016 july, 2016 ? rev. 0 1 publication order number: nrvts8120emfs/d nrvts8120emfs very low leakage trench-based schottky rectifier features ? fine lithography t rench?based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? nrv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc?dc converters ? freewheeling and or?ing diodes ? reverse battery protection ? led lighting ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets flammability rating ul 94?0 @ 0.125 in. ? lead finish: 100% matte sn (tin) ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? device meets msl 1 requirements trench schottky rectifiers 8 amperes 120 volts www. onsemi.com 1,2,3 5,6 so?8 fla t lead case 488aa style 2 te0812 = specific device code a = assembly location y = year w = work week zz = lot traceability marking diagram te0812 aywwzz a a a not used c c 1 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. device package shipping ? ordering information NRVTS8120EMFST1G so?8 fl (pb?free) 1500 / tape & ree l nrvts8120emfst3g so?8 fl (pb?free) 5000 / tape & ree l
nrvts8120emfs www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 120 v average rectified forward current (rated v r , t c = 163 c) i f(av) 8.0 a peak repetitive forward current, (rated v r , square wave, 20 khz, t c = 161 c) i frm 16 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 a storage temperature range t stg ?65 to +175 c operating junction temperature t j ?55 to +175 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol typ max unit thermal resistance, junction?to?lead, steady state (assumes 600 mm 2 1 oz. copper bond pad, on a fr4 board) r jc ? 2.7 c/w electrical characteristics rating symbol typ max unit instantaneous forward voltage (note 1) (i f = 4 a, t j = 25 c) (i f = 8 a, t j = 25 c) (i f = 4 a, t j = 125 c) (i f = 8 a, t j = 125 c) v f 0.648 0.826 0.542 0.613 ? 0.88 ? 0.65 v instantaneous reverse current (note 1) (v r = 90 v, t j = 25 c) (rated dc voltage, t j = 25 c) (v r = 90 v, t j = 125 c) (rated dc voltage, t j = 125 c) i r 1.3 3.70 1.4 2.4 ? 50 ? 10 a a ma ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width = 300 s, duty cycle 2.0%.
nrvts8120emfs www. onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics figure 2. maximum instantaneous forward characteristics v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) 1.4 1.0 0.8 0.6 0.4 0.2 0 0.1 1 10 100 figure 3. typical reverse characteristics figure 4. maximum reverse characteristics v r , instantaneous reverse voltage (v) 80 60 50 40 30 20 10 1.e?06 figure 5. typical junction capacitance v r , reverse voltage (v) 0.1 10 1000 i f , instantaneous forward current (a) i r , instantaneous reverse current (a) c, junction capacitance (pf) i f , instantaneous forward current (a) 70 90 1.e?05 1.e?04 1.e?03 1.e?02 1.e?01 i r , instantaneous reverse current (a) 10 t a = 125 c t a = ?55 c t a = 25 c t a = 150 c t a = 125 c t a = 25 c figure 6. current derating per device t c , case temperature ( c) 140 135 155 150 125 120 0 6 12 i f(av) , average forward current (a) 130 145 square wave dc r jc = 2.7 c/w t j = 25 c 1.2 1.6 t a = 175 c 110 100 120 1.e?07 1 4 10 2 8 16 14 t a = 150 c t a = 175 c 160 175 100 1.8 t a = 85 c 1.4 1.0 0.8 0.6 0.4 0.2 0.1 1 10 100 t a = 125 c t a = ?55 c t a = 25 c 1.2 1.6 t a = 175 c t a = 150 c t a = 85 c t a = 85 c v r , instantaneous reverse voltage (v) 80 60 50 40 30 20 10 1.e?06 70 90 1.e?05 1.e?04 1.e?03 1.e?02 1.e?01 t a = 150 c t a = 125 c t a = 25 c 110 100 120 t a = 175 c t a = 85 c 100 165 170
nrvts8120emfs www. onsemi.com 4 typical characteristics figure 7. forward power dissipation i f(av) , average forward current (a) 8 6 2 0 0 1 3 5 7 p f(av) , average forward power dissipation (w) square wave dc i pk /i av = 5 i pk /i av = 20 i pk /i av = 10 410 2 4 6 7 5 13 9 figure 8. typical thermal characteristics, junction?to?ambient pulse time (sec) 0.01 0.1 100 0.0001 10 0.00001 0.001 0.000001 0.01 0.1 1 10 100 figure 9. typical transient thermal response characteristics, junction?to?case pulse time (sec) 0.01 0.001 0.1 0.0001 1 0.00001 10 0.000001 0.01 0.1 1 10 r(t) ( c/w) r(t) ( c/w) 1 1000 100 1000 50% duty cycle single pulse 20% 10% 5% 2% 1% assumes 25 c ambient and soldered to a 600 mm 2 ? oz copper pad on pcb 50% duty cycle single pulse 20% 10% 5% 2% 1%
nrvts8120emfs www. onsemi.com 5 package dimensions dfn5 5x6, 1.27p (so?8fl) case 488aa issue m style 2: pin 1. anode 2. anode 3. anode 4. no connect 5. cathode *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 4x 4x pitch dimensions: millimeters 1 recommended m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 d1 4.70 4.90 d2 3.80 4.00 e 6.15 e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.575 k 1.20 1.35 l 0.51 0.575 l1 0.125 ref a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 m pin 5 (exposed pad) 5.00 5.30 6.00 6.30 e on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nrvts8120emfs/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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